Vishay SIA448DJ-T1-GE3 N-channel MOSFET, 12 A, 20 V, 6-Pin PowerPAK SC-70

SIA448DJ-T1-GE3 Vishay  N-channel MOSFET, 12 A, 20 V, 6-Pin PowerPAK SC-70
Vishay

Product Information

Dimensions:
1.7 x 1.7 x 0.8mm
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
PowerPAK SC-70
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
23 nC @ 8 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1380 pF @ 1 V
Length:
1.7mm
Pin Count:
6
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
19.2 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.8mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
32.4 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 12 A 20 V 6-Pin PowerPAK SC-70 manufactured by Vishay. The manufacturer part number is SIA448DJ-T1-GE3. The given dimensions of the product include 1.7 x 1.7 x 0.8mm. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of powerpak sc-70. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 23 nc @ 8 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1380 pf @ 1 v . Its accurate length is 1.7mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 30 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 19.2 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.8mm. In addition, it has a typical 8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 32.4 mω maximum drain source resistance.

pdf icon
SiA448DJ, N-Channel 20V (Drain-Source) MOSFET Data Sheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search SIA448DJ-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET16723678. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIA448DJ-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIA448DJ-T1-GE3 N-channel MOSFET, 12 A, 20 V, 6-Pin PowerPAK SC-70. You can also check on our website or by contacting our customer support team for further order details on Vishay SIA448DJ-T1-GE3 N-channel MOSFET, 12 A, 20 V, 6-Pin PowerPAK SC-70.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16723678 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16723678.
Yes. We ship SIA448DJ-T1-GE3 Internationally to many countries around the world.