Maximum Continuous Drain Current:
210 A
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
75 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2 mΩ
Base Part Number:
NTMFS5
Detailed Description:
N-Channel 40V 35A (Ta), 210A (Tc) 3.1W (Ta), 110W (Tc) Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
4550pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
75nC @ 10V
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 20A, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
3.1W (Ta), 110W (Tc)
Current - Continuous Drain (Id) @ 25°C:
35A (Ta), 210A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
