Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.4 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
200 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 100V 2.3A (Ta) 2.4W (Ta) Surface Mount SOT-223-4
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
IRFM120
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
480pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-4
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Customer Reference:
Power Dissipation (Max):
2.4W (Ta)
Technology:
MOSFET (Metal Oxide)
