Mounting Type:
Through Hole
Maximum Power Dissipation:
98 W
Height:
16.51mm
Width:
4.8mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2.4V
Transistor Material:
SiC
Maximum Operating Temperature:
+175 °C
Pin Count:
2 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
FFSP0865
Detailed Description:
Diode Silicon Carbide Schottky 650V 13A (DC) Through Hole TO-220-2
Reverse Recovery Time (trr):
0ns
Current - Reverse Leakage @ Vr:
200µA @ 650V
Operating Temperature - Junction:
-55°C ~ 175°C
Mounting Type:
Through Hole
Voltage - DC Reverse (Vr) (Max):
650V
Capacitance @ Vr, F:
463pF @ 1V, 100kHz
Voltage - Forward (Vf) (Max) @ If:
1.75V @ 8A
Supplier Device Package:
TO-220-2
Packaging:
Tube
Customer Reference:
Current - Average Rectified (Io):
13A (DC)
Package / Case:
TO-220-2
Diode Type:
Silicon Carbide Schottky
Speed:
No Recovery Time > 500mA (Io)
Manufacturer:
ON Semiconductor
