Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
0.22 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
0.65V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
120 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
10 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
FDV30
Detailed Description:
P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds:
11pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
-8V
Gate Charge (Qg) (Max) @ Vgs:
0.31nC @ 4.5V
Rds On (Max) @ Id, Vgs:
10Ohm @ 200mA, 4.5V
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
350mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
120mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
