Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
0.22 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
0.65V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
120 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
10 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
FDV30
Detailed Description:
P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds:
11pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
-8V
Gate Charge (Qg) (Max) @ Vgs:
0.31nC @ 4.5V
Rds On (Max) @ Id, Vgs:
10Ohm @ 200mA, 4.5V
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
350mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
120mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is FDV302P. It has a maximum of 25 v drain source voltage. With a typical gate charge at Vgs includes 0.22 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 350 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 0.93mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.92mm. Whereas its minimum gate threshold voltage includes 0.65v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 120 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 10 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: fdv30. It features p-channel 25v 120ma (ta) 350mw (ta) surface mount sot-23-3. The product's input capacitance at maximum includes 11pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 25v drain to source voltage. The maximum Vgs rate is -8v. The maximum gate charge and given voltages include 0.31nc @ 4.5v. It has a maximum Rds On and voltage of 10ohm @ 200ma, 4.5v. sot-23-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 350mw (ta). The continuous current drain at 25°C is 120ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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