ON Semiconductor FDV302P
Product Information
Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
0.22 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
0.65V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
120 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
10 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
FDV30
Detailed Description:
P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds:
11pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
-8V
Gate Charge (Qg) (Max) @ Vgs:
0.31nC @ 4.5V
Rds On (Max) @ Id, Vgs:
10Ohm @ 200mA, 4.5V
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
350mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
120mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FDV302P. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDV302P.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14520028 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14520028.
Yes. We ship FDV302P Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDV302P. It has a maximum of 25 v drain source voltage. With a typical gate charge at Vgs includes 0.22 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 350 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 0.93mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.92mm. Whereas its minimum gate threshold voltage includes 0.65v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 120 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 10 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: fdv30. It features p-channel 25v 120ma (ta) 350mw (ta) surface mount sot-23-3. The product's input capacitance at maximum includes 11pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 25v drain to source voltage. The maximum Vgs rate is -8v. The maximum gate charge and given voltages include 0.31nc @ 4.5v. It has a maximum Rds On and voltage of 10ohm @ 200ma, 4.5v. sot-23-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 350mw (ta). The continuous current drain at 25°C is 120ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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