Maximum Continuous Drain Current:
2.7 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
100 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.1 nC @ 5 V, 38 nC @ 10 V
Channel Type:
N
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
31 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
182 mΩ
FET Feature:
Standard
Base Part Number:
FDS89161
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
302pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
5.3nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
105mOhm @ 2.7A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
50 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.6W
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2.7A
Manufacturer:
ON Semiconductor
