Maximum Continuous Drain Current:
3.8 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.3 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
28 W
Series:
UniFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
16.07mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.5 Ω
Manufacturer Standard Lead Time:
4 Weeks
Detailed Description:
N-Channel 600V 3.8A (Tc) 28W (Tc) Through Hole TO-220F
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
10.8nC @ 10V
Rds On (Max) @ Id, Vgs:
2.5 Ohm @ 1.9A, 10V
FET Type:
N-Channel
Standard Package:
1,000
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
510pF @ 25V
Mounting Type:
Through Hole
Series:
UniFET-II™
Supplier Device Package:
TO-220F
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
Power Dissipation (Max):
28W (Tc)
Technology:
MOSFET (Metal Oxide)
