Maximum Continuous Drain Current:
211 A
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
102 @ 10 V nC
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
74 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±16 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
1.09 mΩ
FET Feature:
Schottky Diode (Body)
Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 30V 211A (Tc) 74W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS1D4
Gate Charge (Qg) (Max) @ Vgs:
65nC @ 4.5V
Rds On (Max) @ Id, Vgs:
1.09mOhm @ 38A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
10250pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
211A (Tc)
Customer Reference:
Power Dissipation (Max):
74W (Tc)
Technology:
MOSFET (Metal Oxide)
