ON Semiconductor FDMC5614P

FDMC5614P ON Semiconductor
FDMC5614P
FDMC5614P
ON Semiconductor

Product Information

Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
P
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
42 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.725mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
168 mΩ
Manufacturer Standard Lead Time:
40 Weeks
Detailed Description:
P-Channel 60V 5.7A (Ta), 13.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMC56
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Rds On (Max) @ Id, Vgs:
100mOhm @ 5.7A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1055pF @ 30V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta), 13.5A (Tc)
Customer Reference:
Power Dissipation (Max):
2.1W (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDMC5614P. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.3mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of mlp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 42 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.725mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 168 mω maximum drain source resistance. It has typical 40 weeks of manufacturer standard lead time. It features p-channel 60v 5.7a (ta), 13.5a (tc) 2.1w (ta), 42w (tc) surface mount 8-mlp (3.3x3.3). The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: fdmc56. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 100mohm @ 5.7a, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1055pf @ 30v. The product powertrench®, is a highly preferred choice for users. 8-mlp (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.7a (ta), 13.5a (tc). The product carries maximum power dissipation 2.1w (ta), 42w (tc). This product use mosfet (metal oxide) technology.

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FDMC5614P, P-Channel PowerTrench MOSFET -60V, -13.5A, 100mOhm(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Qualify 2nd supplier 13/Aug/2020(PCN Assembly/Origin)
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FDMC5614P(Datasheets)
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Mold Compound 17/March/2008(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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