Maximum Continuous Drain Current:
3.3 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
MLP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.2 nC @ 10 V
Channel Type:
P
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
0.725mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
152 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDMA30
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 30V 3.3A 700mW Surface Mount 6-MicroFET (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
87mOhm @ 3.3A, 10V
Supplier Device Package:
6-MicroFET (2x2)
Manufacturer Standard Lead Time:
39 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
700mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
3.3A
Manufacturer:
ON Semiconductor
