Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
0.22 nC @ 4.5 V, 0.29 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
4 Ω, 10 Ω
Package Type:
SOT-363 (SC-70)
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
140 mA, 220 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
FDG6320
Detailed Description:
Mosfet Array N and P-Channel 25V 220mA, 140mA 300mW Surface Mount SC-88 (SC-70-6)
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
0.4nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
4Ohm @ 220mA, 4.5V
Supplier Device Package:
SC-88 (SC-70-6)
Manufacturer Standard Lead Time:
34 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
300mW
Current - Continuous Drain (Id) @ 25°C:
220mA, 140mA
Manufacturer:
ON Semiconductor
