Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.3 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
280 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDC6506
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 30V 1.8A 700mW Surface Mount SuperSOT™-6
Input Capacitance (Ciss) (Max) @ Vds:
190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
3.5nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
170mOhm @ 1.8A, 10V
Supplier Device Package:
SuperSOT™-6
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
700mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1.8A
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is FDC6506P. While 1.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of sot-23. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 960 mw maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 280 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fdc6506. It features mosfet array 2 p-channel (dual) 30v 1.8a 700mw surface mount supersot™-6. The product's input capacitance at maximum includes 190pf @ 15v. The maximum gate charge and given voltages include 3.5nc @ 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 170mohm @ 1.8a, 10v. supersot™-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 700mw. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 1.8a. The on semiconductor's product offers user-desired applications.
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