Maximum Continuous Drain Current:
6 A
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
±20 V dc, ±30 V ac
Height:
7.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
850 mΩ
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 800V 6A (Tc) 75W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
4.5V @ 600µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number:
FCU850
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1315pF @ 100V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Customer Reference:
Power Dissipation (Max):
75W (Tc)
Technology:
MOSFET (Metal Oxide)
