Diodes Inc ZVN4206GTA N-channel MOSFET, 1 A, 60 V, 3+Tab-Pin SOT-223

ZVN4206GTA Diodes Inc  N-channel MOSFET, 1 A, 60 V, 3+Tab-Pin SOT-223
DiodesZetex

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.65mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
1.5 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 1 A 60 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZVN4206GTA. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1.65mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. It provides up to 1.5 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ZVN4206G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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