Diodes Inc DMN3065LW-7 N-channel MOSFET, 4 A, 30 V, 3-Pin SOT-323

DMN3065LW-7 Diodes Inc  N-channel MOSFET, 4 A, 30 V, 3-Pin SOT-323
DMN3065LW-7
DiodesZetex

Product Information

Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11.7 nC @ 10 V
Channel Type:
N
Length:
2.2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
770 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
85 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 4 A 30 V 3-Pin SOT-323 manufactured by DiodesZetex. The manufacturer part number is DMN3065LW-7. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.35mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.2mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 770 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 85 mω maximum drain source resistance.

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DMN3065LW, N-Channel Enhancement Mode Field Effect Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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