Category:
Power MOSFET
Dimensions:
3 x 1.4 x 1.1mm
Maximum Continuous Drain Current:
270 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
5 Ω
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
60 pF @ 10 V
Length:
3mm
Pin Count:
3
Typical Turn-Off Delay Time:
10 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
