Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.1 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Series:
US6M1
Maximum Gate Source Voltage:
-12 (P-Channel) V, +20 (N-Channel) V
Maximum Gate Threshold Voltage:
2V
Height:
0.75mm
Width:
1.7mm
Length:
2mm
Maximum Drain Source Resistance:
800 mΩ
Package Type:
TUMT
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
±1 (PChannel) A, ±1.4 (NChannel) A
Minimum Gate Threshold Voltage:
0.7V
Forward Diode Voltage:
1.2V
Channel Type:
N, P
Maximum Operating Temperature:
150 °C
Pin Count:
6
