ROHM RTU002P02T106 P-channel MOSFET, 250 mA, 20 V, 3-Pin TSMT

RTU002P02T106 ROHM  P-channel MOSFET, 250 mA, 20 V, 3-Pin TSMT
ROHM

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
2V
Height:
0.85mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
1.5 Ω
Package Type:
TSMT-3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
250 mA
Transistor Material:
Si
Channel Type:
P
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 250 mA 20 V 3-Pin TSMT manufactured by ROHM. The manufacturer part number is RTU002P02T106. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 0.85mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 1.5 ω maximum drain source resistance. The package is a sort of tsmt-3. It consists of 1 elements per chip. While 250 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It contains 3 pins. The product offers single transistor configuration.

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MOSFET,Pch,20V/0.25A,3.0ohm@2.5V,SC-70(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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