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This is N-channel MOSFET 20 A 600 V 3-Pin TO-220FM manufactured by ROHM. The manufacturer part number is R6020ENX. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 50 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 15.4mm. Furthermore, the product is 4.8mm wide. Its accurate length is 10.3mm. It provides up to 200 mω maximum drain source resistance. The package is a sort of to-220fm. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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