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This is Dual N-channel MOSFET 100 A 30 V 6-Pin EMT manufactured by ROHM. The manufacturer part number is EM6K1T2R. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 120 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 1.2mm wide. Its accurate length is 1.6mm. It provides up to 8 ω maximum drain source resistance. The package is a sort of emt. It consists of 2 elements per chip. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 0.5mm. It contains 6 pins. The product offers isolated transistor configuration.
For more information please check the datasheets.
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