Microchip VP2106N3-G P-channel MOSFET, 250 mA, 60 V, 3-Pin TO-92

VP2106N3-G Microchip  P-channel MOSFET, 250 mA, 60 V, 3-Pin TO-92
Microchip

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
5.33mm
Width:
4.06mm
Length:
5.08mm
Maximum Drain Source Resistance:
15 Ω
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
250 mA
Transistor Material:
Si
Forward Diode Voltage:
2V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 250 mA 60 V 3-Pin TO-92 manufactured by Microchip. The manufacturer part number is VP2106N3-G. It has a maximum of 60 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 5.33mm. Furthermore, the product is 4.06mm wide. Its accurate length is 5.08mm. It provides up to 15 ω maximum drain source resistance. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 250 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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