Diodes Inc DMN2005LPK-7 N-channel MOSFET, 440 mA, 20 V, 3-Pin X1-DFN1006

DMN2005LPK-7 Diodes Inc  N-channel MOSFET, 440 mA, 20 V, 3-Pin X1-DFN1006
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
450 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
0.9V
Height:
0.48mm
Width:
0.675mm
Length:
1.08mm
Maximum Drain Source Resistance:
3.5 Ω
Package Type:
X1-DFN1006
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
440 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 440 mA 20 V 3-Pin X1-DFN1006 manufactured by DiodesZetex. The manufacturer part number is DMN2005LPK-7. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 450 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 0.9v of maximum gate threshold voltage. In addition, the height is 0.48mm. Furthermore, the product is 0.675mm wide. Its accurate length is 1.08mm. It provides up to 3.5 ω maximum drain source resistance. The package is a sort of x1-dfn1006. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 440 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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DMN2005LPK-7 N-Channel Enhancement Mode MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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