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This is P-channel MOSFET 38 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF5210SPBF. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 150 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.1 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 2v. The product carries 4v of maximum gate threshold voltage. It provides up to 60 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 4.69mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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