Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
3.9V
Maximum Drain Source Resistance:
1.4 Ω
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
570 pF @ 100 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
72 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
63 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
