Infineon IPD80R1K4CE N-channel MOSFET, 3.9 A, 800 V CoolMOS CE, 3-Pin DPAK
Product Information
Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
3.9V
Maximum Drain Source Resistance:
1.4 Ω
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
570 pF @ 100 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
72 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
63 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 3.9 A 800 V CoolMOS CE 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD80R1K4CE. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 3.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. It provides up to 1.4 ω maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 570 pf @ 100 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 72 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 63 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.41mm. In addition, it has a typical 25 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v .
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