Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
63 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
IPAK (TO-251AA)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
34 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3980 pF@ 25 V
Length:
6.73mm
Pin Count:
4
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
2.39mm
Typical Turn-On Delay Time:
24 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
