Vishay IRFB9N60APBF N-channel MOSFET, 9.2 A, 600 V, 3-Pin TO-220AB

IRFB9N60APBF Vishay  N-channel MOSFET, 9.2 A, 600 V, 3-Pin TO-220AB
Vishay

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
170 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.01mm
Width:
4.7mm
Length:
10.41mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9.2 A
Transistor Material:
Si
Maximum Drain Source Resistance:
750 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

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IRFB9N60APBF Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay IRFB9N60APBF N-channel MOSFET, 9.2 A, 600 V, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Vishay IRFB9N60APBF N-channel MOSFET, 9.2 A, 600 V, 3-Pin TO-220AB.
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Yes. We ship IRFB9N60APBF Internationally to many countries around the world.