Dimensions:
3.1 x 1.7 x 1.2mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.95V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
640 pF @ -6 V
Length:
3.1mm
Pin Count:
3
Typical Turn-Off Delay Time:
70 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.2mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
85 mΩ
