Nexperia BSP225,115 P-channel MOSFET, 225 mA, 250 V, 4-Pin SOT-223 (SC-73)

BSP225-115 Nexperia BSP225,115 P-channel MOSFET, 225 mA, 250 V, 4-Pin SOT-223 (SC-73)
Nexperia

Product Information

Maximum Drain Source Voltage:
250 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.8V
Height:
1.7mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
225 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
15 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 225 mA 250 V 4-Pin SOT-223 (SC-73) manufactured by Nexperia. The manufacturer part number is BSP225,115. It has a maximum of 250 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.8v of maximum gate threshold voltage. In addition, the height is 1.7mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 225 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 15 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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BSP225, P-Channel Enhancement Mode Vertical DMOS Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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