Infineon SPP08N50C3XKSA1 N-channel MOSFET, 7.6 A, 560 V CoolMOS C3, 3-Pin TO-220

SPP08N50C3XKSA1 Infineon  N-channel MOSFET, 7.6 A, 560 V CoolMOS C3, 3-Pin TO-220
Infineon

Product Information

Maximum Continuous Drain Current:
7.6 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
560 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
83 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.65mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
600 mΩ
RoHs Compliant
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This is N-channel MOSFET 7.6 A 560 V CoolMOS C3 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is SPP08N50C3XKSA1. While 7.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.4mm wide. The product offers single transistor configuration. It has a maximum of 560 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 83 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.65mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 600 mω maximum drain source resistance.

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SPA/SPI/SPP08N50C3 N-channel MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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