Infineon IRLL014NPBF N-channel MOSFET, 2.8 A, 55 V HEXFET, 3+Tab-Pin SOT-223

IRLL014NTRPBF Infineon IRLL014NPBF N-channel MOSFET, 2.8 A, 55 V HEXFET, 3+Tab-Pin SOT-223
Infineon

Product Information

Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.5 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
1.739mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
280 mΩ
RoHs Compliant
Checking for live stock

This is IRLL014NPBF N-channel MOSFET 2.8 A 55 V HEXFET 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IRLL014NTRPBF. While 2.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.1 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 1.739mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 280 mω maximum drain source resistance.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
IRLL014N, HEXFET Power MOSFET(Technical Reference)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search IRLL014NTRPBF on website for other similar products.
We accept all major payment methods for all products including ET14041507. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRLL014NTRPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRLL014NPBF N-channel MOSFET, 2.8 A, 55 V HEXFET, 3+Tab-Pin SOT-223. You can also check on our website or by contacting our customer support team for further order details on Infineon IRLL014NPBF N-channel MOSFET, 2.8 A, 55 V HEXFET, 3+Tab-Pin SOT-223.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14041507 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14041507.
Yes. We ship IRLL014NTRPBF Internationally to many countries around the world.