Vishay IRLD014PBF N-channel MOSFET, 1.7 A, 60 V, 4-Pin HVMDIP

IRLD014PBF Vishay  N-channel MOSFET, 1.7 A, 60 V, 4-Pin HVMDIP
Vishay

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
8.4 nC @ 5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
3.37mm
Width:
6.29mm
Length:
5mm
Minimum Gate Threshold Voltage:
1V
Package Type:
HVMDIP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.7 A
Transistor Material:
Si
Maximum Drain Source Resistance:
200 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 1.7 A 60 V 4-Pin HVMDIP manufactured by Vishay. The manufacturer part number is IRLD014PBF. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 8.4 nc @ 5 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 1.3 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 3.37mm. Furthermore, the product is 6.29mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of hvmdip. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 200 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.

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IRLD014PBF Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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