Deliver to
United Kingdom
Enjoy 5% savings by entering the code 'SAVE5' when you spend £50 or more!
This is N-channel MOSFET 1.9 A 600 V 3-Pin DPAK manufactured by MagnaChip. The manufacturer part number is MDD2N60RH. While 1.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 4.5 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 42 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v .
For more information please check the datasheets.
Basket Total:
£ 0
