This is N-channel MOSFET 11 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF8707TRPBF. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.35v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.35v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.2 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 17.5 mω maximum drain source resistance.
IRF8707PbF N-channel HEXFET Power MOSFET(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
Reviews
Be the first
to
review.
Related products
FAQs
Yes. We ship IRF8707TRPBF Internationally to many countries around the world.
Yes. You can also search IRF8707TRPBF on website for other similar products.
We accept all major payment methods for all products including ET14013831. Please check your shopping cart at the time of order.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14013831 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14013831.
You can order Infineon brand products with IRF8707TRPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF8707TRPBF N-channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF8707TRPBF N-channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC.
This is N-channel MOSFET 11 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF8707TRPBF. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.35v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.35v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.2 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 17.5 mω maximum drain source resistance.
Reviews