Diodes Inc DMP2008UFG-7 P-channel MOSFET, 11 A, 20 V, 8-Pin POWERDI3333

DMP2008UFG-7 Diodes Inc  P-channel MOSFET, 11 A, 20 V, 8-Pin POWERDI3333
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
72 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.85mm
Width:
3.35mm
Length:
3.35mm
Maximum Drain Source Resistance:
17 mΩ
Package Type:
PowerDI3333-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 11 A 20 V 8-Pin POWERDI3333 manufactured by DiodesZetex. The manufacturer part number is DMP2008UFG-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 72 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 41 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.85mm. Furthermore, the product is 3.35mm wide. Its accurate length is 3.35mm. It provides up to 17 mω maximum drain source resistance. The package is a sort of powerdi3333-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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DMP2008UFG-7 P-Channel Enhancement Mode MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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