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This is P-channel MOSFET 3 A 12 V 3-Pin TUMT manufactured by ROHM. The manufacturer part number is RZF030P01TL. It has a maximum of 12 v drain source voltage. With a typical gate charge at Vgs includes 18 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.77mm. Furthermore, the product is 1.7mm wide. Its accurate length is 2mm. It provides up to 144 mω maximum drain source resistance. The package is a sort of tumt. It consists of 1 elements per chip. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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