Category:
Power MOSFET
Dimensions:
10.4 x 4.6 x 16.4mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
670 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
410 pF @ 100 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
26 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Series:
MDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
16.4mm
Typical Turn-On Delay Time:
9.5 ns
Forward Diode Voltage:
1.6V
