Nexperia BSS87,115 N-channel MOSFET, 400 mA, 200 V, 3-Pin SOT-89

BSS87-115 Nexperia BSS87,115 N-channel MOSFET, 400 mA, 200 V, 3-Pin SOT-89
Nexperia

Product Information

Maximum Drain Source Voltage:
200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.8V
Height:
1.6mm
Width:
2.6mm
Length:
4.6mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-89
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
400 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
3 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 400 mA 200 V 3-Pin SOT-89 manufactured by Nexperia. The manufacturer part number is BSS87,115. It has a maximum of 200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.8v of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 2.6mm wide. Its accurate length is 4.6mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of sot-89. It consists of 1 elements per chip. While 400 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 3 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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BSS87, 200V, N-Channel Vertical D-MOS Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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