Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
6.6 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17.7 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
637 pF @ -30 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
26.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
9.25 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Typical Turn-On Delay Time:
2.6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
