Diodes Inc DMN65D8L-7 N-channel MOSFET, 310 mA, 60 V, 3-Pin SOT-23

DMN65D8L-7 Diodes Inc  N-channel MOSFET, 310 mA, 60 V, 3-Pin SOT-23
DiodesZetex

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.87 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
540 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
1.1mm
Width:
1.4mm
Length:
3mm
Maximum Drain Source Resistance:
4 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
310 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 310 mA 60 V 3-Pin SOT-23 manufactured by DiodesZetex. The manufacturer part number is DMN65D8L-7. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.87 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 540 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3mm. It provides up to 4 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 310 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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