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This is Diodes Inc Dual N/P-channel MOSFET 2.1 A 3.4 A 30 V 6-Pin TSOT-26 manufactured by DiodesZetex. The manufacturer part number is DMG6602SVT-7. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 7 nc @ 10 v, 9 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.27 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 100 mω, 140 mω maximum drain source resistance. The package is a sort of tsot-26. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.1 a, 3.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
For more information please check the datasheets.
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