Panasonic FG6943010R Dual N/P-channel MOSFET, 100 mA, 30 V FG, 6-Pin SSMini6 F3 B

FG6943010R Panasonic  Dual N/P-channel MOSFET, 100 mA, 30 V FG, 6-Pin SSMini6 F3 B
Panasonic

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 mW
Series:
FG
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.5mm
Width:
1.2mm
Length:
1.6mm
Maximum Drain Source Resistance:
6 Ω, 17 Ω
Package Type:
SSMini6 F3 B
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
100 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Dual N/P-channel MOSFET 100 mA 30 V FG 6-Pin SSMini6 F3 B manufactured by Panasonic. The manufacturer part number is FG6943010R. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 mw maximum power dissipation. The product fg, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.5mm. Furthermore, the product is 1.2mm wide. Its accurate length is 1.6mm. It provides up to 6 ω, 17 ω maximum drain source resistance. The package is a sort of ssmini6 f3 b. It consists of 2 elements per chip. While 100 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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FG694301 Silicon N-channel MOSFET (FET1) Silicon P-channel MOSFET (FET2) Data Sheet(Technical Reference)

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