Infineon IRFTS9342TRPBF P-channel MOSFET, 5.8 A, 30 V HEXFET, 6-Pin TSOP

IRFTS9342TRPBF Infineon  P-channel MOSFET, 5.8 A, 30 V HEXFET, 6-Pin TSOP
IRFTS9342TRPBF
Infineon

Product Information

Maximum Continuous Drain Current:
5.8 A
Transistor Material:
Si
Width:
1.75mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
TSOP-6
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
66 mΩ
RoHs Compliant
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This is P-channel MOSFET 5.8 A 30 V HEXFET 6-Pin TSOP manufactured by Infineon. The manufacturer part number is IRFTS9342TRPBF. While 5.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.75mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of tsop-6. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 66 mω maximum drain source resistance.

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IRFTS9342PbF, HEXFET Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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