ROHM RUR040N02TL N-channel MOSFET, 4 A, 20 V, 3-Pin TSMT

RUR040N02TL ROHM  N-channel MOSFET, 4 A, 20 V, 3-Pin TSMT
ROHM

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.8mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
110 mΩ
Package Type:
TSMT-3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 4 A 20 V 3-Pin TSMT manufactured by ROHM. The manufacturer part number is RUR040N02TL. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 110 mω maximum drain source resistance. The package is a sort of tsmt-3. It consists of 1 elements per chip. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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RUR040N02 1.5V Drive N-ch MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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