Vishay IRFU1N60APBF N-channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK

IRFU1N60APBF Vishay  N-channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK
Vishay

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
36 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.22mm
Width:
2.39mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
2V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.4 A
Transistor Material:
Si
Maximum Drain Source Resistance:
7 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 1.4 A 600 V 3-Pin IPAK manufactured by Vishay. The manufacturer part number is IRFU1N60APBF. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 14 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 36 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 6.22mm. Furthermore, the product is 2.39mm wide. Its accurate length is 6.73mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 7 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A, Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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