Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
11.9 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1680 pF @ -25 V
Length:
5mm
Pin Count:
8
Forward Transconductance:
20S
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.5mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
