Infineon IRFI4510GPBF N-channel MOSFET, 35 A, 100 V HEXFET, 3-Pin TO-220FP

IRFI4510GPBF Infineon  N-channel MOSFET, 35 A, 100 V HEXFET, 3-Pin TO-220FP
Infineon

Product Information

Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
13 nC @ 50 V
Channel Type:
N
Length:
10.63mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
42 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
13.5 mΩ
RoHs Compliant
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This is N-channel MOSFET 35 A 100 V HEXFET 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IRFI4510GPBF. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 13 nc @ 50 v. The product is available in [Cannel Type] channel. Its accurate length is 10.63mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 42 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 13.5 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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IRFI4510GPbF, HEXFET Power MOSFET(Technical Reference)

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