Infineon BSP315PH6327XTSA1 P-channel MOSFET, 1.17 A, 60 V SIPMOS, 3+Tab-Pin SOT-223

BSP315PH6327XTSA1 Infineon  P-channel MOSFET, 1.17 A, 60 V SIPMOS, 3+Tab-Pin SOT-223
Infineon

Product Information

Maximum Continuous Drain Current:
1.17 A
Transistor Material:
Si
Width:
3.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.2 nC @ 10 V
Channel Type:
P
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.8 W
Series:
SIPMOS®
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
800 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 1.17 A 60 V SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP315PH6327XTSA1. While 1.17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.5mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.8 w maximum power dissipation. The product sipmos®, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 800 mω maximum drain source resistance.

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BSP315P SIPMOS Small Signal Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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