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This is N-channel MOSFET 9.7 A 600 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK10E60W,S1VX(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 20 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 100 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 15.1mm. Furthermore, the product is 4.45mm wide. Its accurate length is 10.16mm. It provides up to 380 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 9.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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