Diodes Inc DMN4010LFG-7 N-channel MOSFET, 14.2 A, 40 V, 8-Pin POWERDI3333

DMN4010LFG-7 Diodes Inc  N-channel MOSFET, 14.2 A, 40 V, 8-Pin POWERDI3333
DiodesZetex

Product Information

Maximum Continuous Drain Current:
14.2 A
Transistor Material:
Si
Width:
3.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3V
Package Type:
PowerDI3333-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Length:
3.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.45 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.72V
Maximum Drain Source Resistance:
15 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 14.2 A 40 V 8-Pin POWERDI3333 manufactured by DiodesZetex. The manufacturer part number is DMN4010LFG-7. While 14.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.35mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of powerdi3333-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.35mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.45 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.72v . It provides up to 15 mω maximum drain source resistance.

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DMN4010LFG, Advanced Information 40V N-Channel Enhancement Mode MOSFET POWERDI(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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