Nexperia BSP220,115 P-channel MOSFET, 225 mA, 200 V, 3+Tab-Pin SOT-223

BSP220-115 Nexperia BSP220,115 P-channel MOSFET, 225 mA, 200 V, 3+Tab-Pin SOT-223
Nexperia

Product Information

Maximum Drain Source Voltage:
200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.8V
Height:
1.7mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
225 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
12 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 225 mA 200 V 3+Tab-Pin SOT-223 manufactured by Nexperia. The manufacturer part number is BSP220,115. It has a maximum of 200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.8v of maximum gate threshold voltage. In addition, the height is 1.7mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of sot-223. It consists of 1 elements per chip. While 225 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 12 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Trans MOSFET PCH 200V 0.225A 4P 3Tab(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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